Al F. Tasch received his
B.S. degree in physics in 1963 from The University of Texas at Austin, and his
M.S. and Ph.D. degrees in physics in 1965 and 1969, respectively, from the
University of Illinois, Urbana-Champaign. His thesis research in impurities in
silicon was the pioneering work that led to the widely known deep-level
transient spectroscopy (DLTS) approach for characterizing impurities in
semiconductors. In 1969, he joined Texas Instruments. From 1969 to 1970, his
research on the surface of HgCdTe resulted in the first reported demonstration
of an MIS structure in HgCdTe, and
helped lay the foundation for infrared detector development and products
throughout the 1970's and 1980's. In 1970-1971, he was a member of a group at
Texas Instruments which worked on the improvement of yield in a revolutionary
automated MOS IC manufacturing facility. From 1972 to 1982, he worked on CCD
memories, DRAMs and MOS VLSI device technology. He and his group did pioneering
work in MOS dynamic memory, silicon-on-insulator, and scaled
MOS transistors with sidewall oxides and self-aligned silicided gates and
source-drains. He joined Motorola in 1982 to start-up a new MOS integrated
circuit manufacturing facility. In 1984, he was promoted to Director of the MOS
technology development laboratory, and he was appointed Vice President of the
Technical Staff in 1985. In July 1986, he joined the faculty of the Department
of Electrical and Computer Engineering at The University of Texas at Austin,
occupying the Cockrell Family Regents Chair in Engineering.
His current interests include fabrication and devices for ULSI
circuits, including the development of improved process and device models and
simulation codes. The model development has led to the transfer and adoption by
industry of many important models for ion implantation, inversion layer
mobility, hot-carrier phenomena, inversion layer and accumulation layer
quantization effects, and advanced transport based on the hydrodynamic
formalism. Dr. Tasch has been awarded 38 U.S. Patents, and he is a member of the
IEEE, the Electrochemical Society,and the Materials Research Society. In 1978,
he was honored as a Texas Instruments Fellow, and in 1983 he was elected an IEEE
Fellow. In 1988 he received the J. J. Ebers award from the IEEE for outstanding
contributions to electron devices, and in 1989 he was elected to the National
Academy of Engineering. In 1995, Dr. Tasch was honored with the Hocott
Distinguished Centennial Engineering Research Award at The University of Texas
at Austin. In 1997, hereceived the University Leadership Award from the
Semiconductor Industry Association, the Electronics Division Award from the
Electrochemical Society, and the Alumni Award for distinguished service in the
College of Engineering at the University of Illinois
at Urbana-Champaign.